TweakTown

SK hynix ramps 1c DRAM to 6 EUV layers, preps for High-NA EUV designs to destroy Samsung in HBM

Use left and right arrow keys to seek audio. SK hynix is reportedly using the EUV process in the development of its next-gen DRAM, with its 1c DRAM (6th-generation 10nm-class) for which transitional ...

SK Hynix Plans to Double DRAM Production Capacity to 1 Million Wafers Per Month by 2030

SK Hynix plans to double DRAM production by 2030 as AI demand rises, with major investments across Korea and China.
EDN

Micron Shrinks DRAM Process Technology, Achieving the World’s Smallest 1 Gigabit DDR2 Memory Chip

Micron Technology, Inc., has announced production sampling of its new 1Gb DDR2 device fabricated on 68-nanometer (nm) DRAM process technology. The new process, coupled with Micron’s 6F² technology, ...
Fudzilla

Samsung and SK hynix fight over future DRAM

Samsung and SK hynix are taking different bets on next-generation DRAM as AI turns memory into a knife fight. Industry insiders claim the Korean memory giants are taking separate routes to make ...
Hosted on MSN

Samsung, SK hynix chart different paths in next-gen DRAM battle

Samsung Electronics and SK hynix are taking sharply different approaches in their bid to lead the 10-nanometer-class sixth-generation DRAM segment (1c, 11–12 nanometer-class), the latest battleground ...
Semiconductor Engineering

Smaller Geometries, Bigger Demands: The Role Of OCD In GAA Logic And Vertical Gate DRAM Process Control

AI workloads are pushing the boundaries of compute, memory, and interconnect architectures, and to meet these goals, manufacturers are rapidly accelerating advanced logic and DRAM development. Chief ...