At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...

Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to ...

Mitsubishi Electric's European subsidiary Mitsubishi Electric R&D Centre Europe BV will begin developing a prototype to demonstrate a junction-temperature estimation technology for SiC power modules, ...

While USB-C chargers and adapters have been the forerunners, GaN is now on its way to reaching tipping points in its adoption in further industries, substantially driving the market for GaN-based ...