Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.

Mar 1, 2025 · Indium Arsenide (InAs) is a semiconductor compound composed of indium (In) and arsenic (As). It belongs to the III-V semiconductor family and possesses unique electronic and optical …

Jan 23, 2025 · Indium Arsenide is a III–V semiconductor with interesting properties such as low electron effective mass, a small band gap, strong spin–orbit coupling, a large g-factor, and a surface Fermi …

Basic Parameters at 300 K Band structure and carrier concentration Basic Parameters of Band Structure and carrier concentration Temperature Dependences Energy Gap Narrowing at High Doping Levels …

Dec 20, 2024 · Indium Arsenide (InAs) is a fascinating compound with unique properties that make it essential in various technological applications. This semiconductor material is known for its narrow …

InAs crystal has high uniformity of electrical parameters, constant lattice, high electron mobility and low defect density. A cylindrical InAs crystal grown by VGF or LEC can be sliced and fabricated into …

Indium arsenide (InAs) is a compound semiconductor material that belongs to the III-V group of semiconductors. It is known for its high electron mobility and narrow energy band gap, making it …

InAs is SC16 CuCl, stable at 5GPa structured and crystallizes in the cubic Pa-3 space group. The structure is three-dimensional.

Sep 1, 2023 · InAs nanowires are highly regarded as potential candidates for the next generation of optoelectronic devices, attributed to their exceptional optical and electrical characteristics.

Dec 24, 2024 · This review explores the recent innovations in the processing techniques and architectural designs of InAs-based FinFETs, with a focus on overcoming scaling and integration …